دراسة الانتشار الذاتي واللاذاتي للأرسونيك في الجيرمانيوم

Abstract

High intrinsic carrier mobility, small band gap for germanium have prompted renewed interest in germanium to continue the historic progress of electronic devices. To obtain efficient germanium-based electronic devices, it is necessary to understand the dopant diffusion in this semiconductor. Up to now, n- type dopant diffusion in germanium at most is modeled by diffusivity proportional to the square of the free electron density (n). This study determines the temperature dependence of the quadratic proportionality factor of the As diffusivity with the free electron density, through simulations of experimental As diffusion profiles in the temperature range from 640 to 868 °C. Accurate simulation is achieved within that temperature range, taking into account the quadratic proportionality between the phosphorus diffusivity and the free electron density.