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Title: | Electrical properties of the GaAlAsSb/GaSb heterojunctions for lasers and photodetectors application |
Authors: | Rabah Moussa, Djamel Boukredimi,Mohamed Mébarki |
Keywords: | GaAlAsSb/GaSb, heterojunction, current- voltage and band offset. |
Issue Date: | 22-Dec-2013 |
Abstract: | The GaAlAsSb alloy is an interesting material for optoelectronic device technology and particularly for the preparation of lasers and photodetectors. Therefore, electrical properties of GaSb/GaAlAsSb heterojunctions are important for the characteristic devices based on them.The current-voltage characteristic of Ga0.53Al0.47As0.04Sb0.96(p)/GaSb(n+) heterojunction, obtained byliquid phase epitaxy on GaSb substrate, is studied. The current of the heterojunction, which is essentially a thermoionic emission of holes, has a behavior identical than that of the Schottky diode, which have permitted to derive the barrier height Vb = 685 meV for this heterostructure. The Richardsonconstant of the system is calculated to be 49.1 A.cm-2. K-2.The band offsets at the interface between the two semiconductors are determined as ∆EC = 460 meV, ∆EV = 128 meV, in agreement with other works. The preliminary study of the variation of the valence band offset with Al composition shows a good agreement with the theoretical models proposed by Jaros and Mujica. |
Description: | The INTERNATIONAL CONFERENCE ON ELECTRONICS & OIL: FROM THEORY TO APPLICATIONS March 05-06, 2013, Ouargla, Algeria |
URI: | http://hdl.handle.net/123456789/3427 |
ISSN: | waf |
Appears in Collections: | 3. Faculté des sciences appliquées |
Files in This Item:
File | Description | Size | Format | |
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Rabah_Moussa.pdf | 427,33 kB | Adobe PDF | View/Open |
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