The characterization of ITO/Glass, SiO2/Si systems using Spectroscopic Ellipsometry.

Abstract

Indium tin oxide (ITO) and SiO2 thin films optical properties are the area of investigation in this work. The given commercial thin films have been deposited respectively on a glass and silicon substrate, and analyzed using multiplenangles of incidence by Spectroscopic Ellipsometry (SE) and UV-vis spectrophotometry techniques. The thickness acquired from ellipsometric measurements is 100˚A, 25nm, and 60nm for ITO and the two SiO2 samples, respectively. For a 75° angle of incidence at 632.8 nm, ITO thin films recorded optical constants (n, k) equal to (1.3983 ,1.26493) and (1.3469 , 0.0520) using SE and UV-vis reflectance data, respectively. SiO2 had a null extinction coefficient and a refractive index equal to 1.46233 through all sample thickness and angles of incidence. Surface roughness was estimated in angstroms (see table 4.2). The optical band gap of ITO was determined using UV-vis absorbance and transmission data, resulting in 3.80737eV and 3.76035 eV, respectively. Dispersion parameters were further extracted, tabulated and discussed.