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DC Field | Value | Language |
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dc.contributor.author | Zehor Allam, Abdelkader Hamdoune, Chahrazed Boudaoud | - |
dc.date.accessioned | 2013-12-22T10:41:39Z | - |
dc.date.available | 2013-12-22T10:41:39Z | - |
dc.date.issued | 2013-12-22 | - |
dc.identifier.issn | waf | - |
dc.identifier.uri | http://hdl.handle.net/123456789/3562 | - |
dc.description | The INTERNATIONAL CONFERENCE ON ELECTRONICS & OIL: FROM THEORY TO APPLICATIONS March 05-06, 2013, Ouargla, Algeria | en_US |
dc.description.abstract | In this paper, we consider an AlGaN/GaN/AlN ultraviolet (UV) photodetector. We first describe internal characteristics; and then we simulate carriers’ mobility as a function of temperature, dark current as a function of anode voltage, and photocurrent versus optical wavelength. The device exhibits at room temperature, hole mobility of about 150 cm2/Vs, electron mobility of about 350 cm2/Vs, a low dark current of about 10-12 A for a reverse bias of 10 V, a current equal to zero for a forward bias, and a photocurrent peak of 1.45 nA at a wavelength of 340 nm, under 0.5 V bias. | en_US |
dc.language.iso | en | en_US |
dc.subject | Gallium nitride (GaN) | en_US |
dc.subject | aluminum nitride (AlN) | en_US |
dc.subject | aluminum gallium nitride (AlGaN) | en_US |
dc.title | Performance of an AlGaN/GaN/AlN UV Photodetector. | en_US |
dc.type | Article | en_US |
Appears in Collections: | 3. Faculté des sciences appliquées |
Files in This Item:
File | Description | Size | Format | |
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Zehor_Allam.pdf | 175,13 kB | Adobe PDF | View/Open |
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