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DC Field | Value | Language |
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dc.contributor.author | Bahmed DAOUDI | - |
dc.contributor.author | Aomar BOUKRAA | - |
dc.date.accessioned | 2010 | - |
dc.date.available | 2010 | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 2170-0672 | - |
dc.identifier.uri | http://dspace.univ-ouargla.dz/jspui/handle/123456789/6404 | - |
dc.description | AST Annales des Sciences et Technologie | en_US |
dc.description.abstract | The structural phase transformations of GaN under high-pressure are studied using the full-potential linearized augmented plane wave (FP-LAPW) approaches within the density functional formalism (DFT) in the local density approximation (LDA) and the generalized gradient approximation (GGA). We have calculated the ground-state energy, the lattice constant, the bulk modulus, its pressure derivative, and the electronic structure of the wurtzite (WZ), zinc-blende (ZB) and rocksalt (RS) phases of GaN. The GGA results of the critical pressure of the WZ→ZB and WZ→RS transitions present small but non negligible variations with respect to the LDA results. The RS-GaN is predicted to be an indirect band gap semiconductor, with a band gap of 1.68 eV. | en_US |
dc.language.iso | en | en_US |
dc.relation.ispartofseries | volume 2 numéro 1 AST 2010; | - |
dc.subject | FP-LAPW | en_US |
dc.subject | Density functional formalism | en_US |
dc.subject | GaN under high-pressure | en_US |
dc.subject | Structural phase transformations | en_US |
dc.title | THE STRUCTURAL AND ELECTRONIC PROPERTIES OF GAN UNDER HIGH PRESSURE | en_US |
dc.type | Article | en_US |
Appears in Collections: | volume 2 numéro 1 AST 2010 |
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A020103.PDF | 246,85 kB | Adobe PDF | View/Open |
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