Performance of an AlGaN/GaN/AlN UV Photodetector.

Abstract

In this paper, we consider an AlGaN/GaN/AlN ultraviolet (UV) photodetector. We first describe internal characteristics; and then we simulate carriers’ mobility as a function of temperature, dark current as a function of anode voltage, and photocurrent versus optical wavelength. The device exhibits at room temperature, hole mobility of about 150 cm2/Vs, electron mobility of about 350 cm2/Vs, a low dark current of about 10-12 A for a reverse bias of 10 V, a current equal to zero for a forward bias, and a photocurrent peak of 1.45 nA at a wavelength of 340 nm, under 0.5 V bias.