The effect of fractional derivative on p-n junction depth estimation

Abstract

The impact of fractional derivatives on the depth of the p-n junction is significant in the realm of semiconductor physics. Through numerical simulations, it has been observed that adjusting the values of parameters such as α and β influences the diffusion rate and depth of the p-n junction crossing. Specifically, an increase in the value of parameter β leads to faster diffusion and deeper p-n junction crossing, while an increase in parameter α results in slower diffusion and shallower p-n junction crossing. These findings highlight the crucial role of fractional derivatives in understanding the formation and characteristics of the p-n junction, emphasizing their importance in semiconductor device design and optimization.